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THE MEASUREMENT OF ELECTRICAL PROPERTIES OF UNCONTAMINATED PBTE FILMS PREPARED BY MOLECULAR BEAM DEPOSITION.WILLIAMS D; PARKER EHC.1977; J. PHYS. E.; G.B.; DA. 1977; VOL. 10; NO 11; PP. 1176-1179; BIBL. 9 REF.Article

RELATIONSHIP OF MBE GROWTH PARAMETERS WITH THE ELECTRICAL PROPERTIES OF THIN (100) INAS EPILAYERSGRANGE JD; PARKER EHC; KING RM et al.1979; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1979; VOL. 12; NO 9; PP. 1601-1612; BIBL. 1 P.Article

A SIMPLE SOURCE CELL DESIGN FOR MBEKUBIAK RA; DRISCOLL P; PARKER EHC et al.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 20; NO 2; PP. 252-253; BIBL. 8 REF.Article

STATIC SECONDARY ION MASS SPECTROSCOPY (SSIMS) ANALYSIS OF THE MICA SURFACE.DOWSETT MG; KING RM; PARKER EHC et al.1978; SURF. SCI.; NETHERL.; DA. 1978; VOL. 71; NO 3; PP. 541-547; BIBL. 12 REF.; 3 ILL.Article

THIN INAS EPITAXIAL LAYERS GROWN ON (100) GAAS SUBSTRATES BY MOLECULAR BEAM DEPOSITIONMEGGITT BT; PARKER EHC; KING RM et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 6; PP. 528-530; BIBL. 14 REF.Article

EVALUATION OF IMPURITY AND CONTAMINATION LEVELS ON MICA SURFACES USING SSIMSDOWSETT MG; KING RM; PARKER EHC et al.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 2; PP. 711-717; BIBL. 19 REF.; 5 ILL.Article

ELECTRICAL AND STRUCTURAL PROPERTIES OF INAS LAYERS ON (100) GAAS SUBSTANCES PREPARED BY MOLECULAR BEAM DEPOSITIONMEGGITT BT; PARKER EHC; KING RM et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 50; NO 2; PP. 538-548; BIBL. 48 REF.Article

MODIFICATIONS TO THE ELECTRICAL OF PBTE BY LOW-ENERGY ION BOMBARDMENT-INTERPRETATION IN TERM OF DIFFERENTIAL SPUTTERING AND ATOMIC MIXINGKUBIAK RA; PARKER EHC; KING RM et al.1983; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. A, VACUUM, SURFACES, AND FILMS; ISSN 512915; USA; DA. 1983; VOL. 1; NO 1; PP. 34-40; BIBL. 38 REF.Article

AN INVESTIGATION INTO SILICON DOPING OF MBE(100) GAASPARKER EHC; KUBIAK RA; KING RM et al.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 10; PP. 1853-1865; BIBL. 34 REF.Article

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